Transcript
Preliminary Data Sheet
PD166015GR
R07DS0595EJ0100 Rev.1.00 Jan 19, 2012
MOS INTEGRATED CIRCUIT Description
The PD166015 is an N-channel high side driver with built-in charge pump and embedded protection function. It is also a linear solenoid driver with a built-in differential amplifier. When device is overtemperature or overcurrent is generated in output MOS, the protection function operates to prevent destruction and degradation of the product. When the current flows through the external shunt resistor near the input part of the differential amplifier, the voltage drops at each end of the resistor. The output current can be monitored when the microcomputer reads the output voltage from the amplifier.
Features High temperature operation (Tch = 175°C MAX.) Built-in charge pump circuit Low on-state resistance RDS(ON) = 100 m MAX. (VIN = VIH, IO = 1.5A, Tch = 25°C) Built-in protection circuit Current limitation Overtemperature protection Built-in differential amplifier (gain = 8 times) Package: Power SOP 8
Application Switching of all types of 14 V DC grounded loads, such as inductor, resistor and capacitor
Ordering Information Part No. PD166015GR-E1-AY PD166015GR-E2-AY
R07DS0595EJ0100 Rev.1.00 Jan 19, 2012
Lead Plating Sn Sn
Packing Tape 2500 p/reel Tape 2500 p/reel
Package Power SOP 8 Power SOP 8
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PD166015GR
Block Diagram VCC
Pin 5 Pin 8
Pin 1
IN Charge pump Overtemperature detection
Current Limitation
Overcurrent detection
Pin 2
OUT
IN+
+
AMP
–
IN– GND
Pin 4
Pin 6 Pin 7 Pin 3
Pin Configuration Power SOP 8 IN
1
8
VCC
AMP
2
7
IN–
GND
3
6
IN+
OUT
4
5
VCC
(Top view)
Pin Functions Pin No. 1 2 3 4 5 6 7 8
Pin Name IN AMP
Input pin Differential amplifier output pin
GND OUT VCC IN+ IN– VCC
Ground pin High side output pin Power supply pin Differential amplifier + input pin Differential amplifier – input pin Power supply pin
R07DS0595EJ0100 Rev.1.00 Jan 19, 2012
Function
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PD166015GR
Absolute Maximum Ratings (Ta = 25°C, unless otherwise specified) Item Power supply voltage IN input voltage IN input current Amplifier input voltage Amplifier input current Output current Output negative voltage Power dissipation Operation temperature Storage temperature Current monitor output voltage Current monitor output current Note:
Symbol VCC1 VCC2 VIN1 VIN2 IIN VIN IIN IOA VOA PD Topt Tstg VAMP IAMP
Rating –0.3 to +35 40 –0.5 to +7.0 5 10 –1.1 to +18 10 2 VCC–60 1.50 –40 to +125 –55 to +175 8.0 10
Unit V V V V mA V mA A V W °C °C V mA
Condition = 250 ms IN pin VCC = 0 V, t = 0.5 s, IN pin RIN = 1 k, IN+/IN– pin IN pin, IN+/IN– pin
Ta = 25°C Note
When mounted on a epoxy PCB (where FR-4 is 10 cm 10 cm, dimension of copper foil is 15% and thickness of copper foil is 35 m), PW = 10 s
R07DS0595EJ0100 Rev.1.00 Jan 19, 2012
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PD166015GR
Electrical Characteristics (VCC = 8 to 16 V, Tch = –40 to +175°C, unless otherwise specified) Item Input voltage
Drain to source on-state resistance
RDS(ON)
Overcurrent detection
IS
MIN. 3.0 0 30 –10 — –0.24 — — 2
Overtemperature detection Turn on delay time Turn off delay time Rise time Fall time Negative output voltage
Tth
(175)
—
—
°C
Note 2
tD(ON) tD(OFF) tON tOFF –VO tS
— — — — — —
5 50 30 20 — —
50 200 200 200 VCC–50 14
s s s s V ms
RL = 9.3 , VCC = 14 V, VIN = 5.0 V–0 V
IO = –60 mA Overcurrent
DS
—
—
30
%
Overcurrent
VOAMP
0
—
7.5
V
RLAMP = 50 k (connect to ground)
IOAMP (SOURCE)
—
—
–0.1
mA
Rsh = 0.25 , Ish = 1.50 A, VOAMP 0.977
IOAMP (SINK) SRCM GAIN VOGAINW(0.05) VOGAINW(0.10) VOGAINW(0.15) VOGAINW(0.50) VOGAINW(1.00)
0.1
—
—
mA
— — –47.0 –23.8 –16.0 –5.4 –3.1 –2.3
0.3 8 — — — — — —
— — 47.0 23.8 16.0 5.4 3.1 2.3
Rsh = 0.25 , Ish = 1.50 A, VOAMP 1.023 RLAMP = 50 k (connect to ground)
Input current Standby current Output leakage current
At over current condition
Output oscillation cycle Output on duty
Amplifier output voltage range Amplifier output current
Amplifier slew rate Amplifier gain Current detection accuracy
Symbol VIH VIL IIH IIL ICCH IOL
VOGAINW(1.50)
TYP. — — — — — — 80 150 —
MAX. 7.0 1.0 400 — 7 — 100 180 (10)
Unit V V A A mA mA m m A
V/s
Condition VCC = 4.5 to 16 V VIN = 5.5 V VIN = 0 V VIN = VIH or VIL Note 1 VIN = VIL, VO = 0 V VIN = VIH, IO = 1.5 A
Tch = 25°C Tch = 150°C
Note 2
Times
% % % % % %
Rsh = 0.25 VCC = 8 to 16 V RLAMP = 50 k (connect to ground)
Ish = 0.05 A Ish = 0.10 A Ish = 0.15 A Ish = 0.50 A Ish = 1.00 A Ish = 1.50 A
Notes: 1. OUT current is not included. 2. Not subject to production test, specified by design.
R07DS0595EJ0100 Rev.1.00 Jan 19, 2012
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PD166015GR
Definition of Switching Time
50%
Input voltage: VIN
50%
tD(ON)
tD(OFF) 90%
90%
Output voltage: VOUT 10%
10% tON
tOFF
14 V
VCC IN VIN
OUT
VOUT
RL 9.3 Ω
GND
Switching Measurement Circuit
Truth Table Item Normal operation Overtemperature detection Overcurrent detection
R07DS0595EJ0100 Rev.1.00 Jan 19, 2012
VIN H L H L H L
VOUT H L L L Chopping L
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PD166015GR
Outline of Functions Pre-Driver (Charge Pump Circuit) ON/OFF Control When the input voltage of the input pin (IN) is high level (3.0 V or more), the output MOS (Nch) turns on. When the output voltage of the input pin (IN) is low level (1.0 V or less), the output MOS (Nch) turns off. Charge pump circuit is built-in to drive the output MOS (Nch) that is connected to the high side. "H"
5V
VIN
GND
VCC
"L"
"H"
"H" "L"
"L" ON
VOUT (Load resistace) GND OFF
ON
"L" ON
OFF
OFF
OFF
Overcurrent Detection Circuit This circuit detects overcurrent to output pin (OUT) caused by short circuit etc., and feeds back detection signal to control circuit. When the overcurrent is detected, the current limitation circuit and the control circuit start operation. The output current is restricted and chopping operation begins.
Current Limitation Circuit This circuit limits the output current by using the detection signal from the overcurrent detection circuit, preventing destruction and degradation of the product.
Overtemperature Detection Circuit This circuit detects overtemperature by output MOS (Nch) driving, and feeds back detection signal to control circuit. When the circuit detects overtemperature, the protection function of the control circuit operates and output is shutdown. Output MOS (Nch) automatically restarts when channel temperature cools down after shutdown. "H"
5V
VIN "L"
VOUT
Tch
R07DS0595EJ0100 Rev.1.00 Jan 19, 2012
OFF
"L"
ON
OFF
ON
OFF
GND
VCC
THIH THIL
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PD166015GR Differential Amplifier Circuit This amplifier circuit amplifies the differential input voltage (IN+ and IN–) to the differential amplifier eight times. When the current flows through the external shunt resistor (Rsh) near the input part of the differential amplifier, the voltage drops at each end of the resistor. The output current can be monitored when the A/D converter in the microcomputer reads the output voltage from the amplifier. The linear solenoid driver monitors the current through the differential amplifier circuit, and drives constant current by controlling the PWM of the output MOS. VOGAINW(1.50) VOGAINW(1.00)
3V
VOGAINW(0.50)
2V 1V VOGAINW(0.15) VOAMP
0.3 V 0.2 V
VOGAINW(0.10) VOGAINW(0.05)
0.1 V
0.05 A
0.1 A
0.15 A
0.5 A
1A
1.5 A
Ish
VCC
VCC
IN
Ish
OUT IN+
RIN = 1 kΩ
AMP VOAMP V
RLAMP = 50 kΩ
IN–
RIN = 1 kΩ
Rsh = 0.25 Ω
GND
Amplifier Characteristic Measurement Circuit
R07DS0595EJ0100 Rev.1.00 Jan 19, 2012
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PD166015GR
Timing Chart Overtemperature release
VIN
Overtemperature detection
Overcurrent detection
Overcurrent release
VOUT
Normal operation
Overtemperature detection
Normal operation
Overcurrent detection
Normal operation
Example of Application Circuit Battery etc. VCC IN
OUT Port
Control Circuit
OUT
MCU
10 kΩ A/D IN
AMP
0.47 μF
IN+
RIN = 1 kΩ
IN–
RIN = 1 kΩ
IN+ IN–
Rsh 0.25 Ω
GND
R07DS0595EJ0100 Rev.1.00 Jan 19, 2012
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PD166015GR
Typical Characteristics INPUT VOLTAGE vs. POWER SUPPLY VOLTAGE
INPUT VOLTAGE vs. AMBIENT TEMPERATURE 3.0
2.5
VIH
2.0
VIL
VIH/VIL - Input Voltage - V
VIH/VIL - Input Voltage - V
3.0
1.5 1.0 0.5 0 0
5
10
15
1.0 0.5
0
50
100
150
200
HIGH LEVEL INPUT CURRENT vs. AMBIENT TEMPERATURE
LOW LEVEL INPUT CURRENT vs. AMBIENT TEMPERATURE 10 IIL - Low Level Input Current - μA
IIH - High Level Input Current - μA
1.5
Ta - Ambient Temperature - °C
300 250 200 150 100 50 0
50
100
150
8 6 4 2 0 –2 –4 –6 –8 –10 –50
200
0
50
100
150
200
Ta - Ambient Temperature - °C
Ta - Ambient Temperature - °C
STANDBY CURRENT vs. AMBIENT TEMPERATURE
OUTPUT LEAKAGE CURRENT vs. AMBIENT TEMPERATURE
1.0
0 IOL - Output Leakage Current - A
ICCH - Standby Current - mA
VIL
VCC - Power Supply Voltage - V
350
0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 –50
VIH
2.0
0 –50
20
400
0 –50
2.5
0
50
100
150
Ta - Ambient Temperature - °C
R07DS0595EJ0100 Rev.1.00 Jan 19, 2012
200
–10 –20 –30 –40 –50 –60 –70 –80 –90 –100 –50
0
50
100
150
200
Ta - Ambient Temperature - °C
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PD166015GR DRAIN TO SOURCE ON-STATE RESISTANCE vs. AMBIENT TEMPERATURE
200
200
180
180
RDS(ON) - Drain to Source On-state Resistance - mΩ
RDS(ON) - Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs. POWER SUPPLY VOLTAGE
160 140 120 100 80 60 40 20 0
5
10
15
120 100 80 60 40 0 –50
20
50
100
150
Ta - Ambient Temperature - °C
OVERCURRENT DETECTION vs. POWER SUPPLY VOLTAGE
OVERCURRENT DETECTION vs. AMBIENT TEMPERATURE
8.0
8.0
7.0
7.0
6.0 5.0 4.0 3.0 2.0 1.0 0 0
0
VCC - Power Supply Voltage - V
IS - Overcurrent Detection - A
IS - Overcurrent Detection - A
140
20
0
5
10
15
200
6.0 5.0 4.0 3.0 2.0 1.0 0 –50
20
0
50
100
150
200
VCC - Power Supply Voltage - V
Ta - Ambient Temperature - °C
OUTPUT OSCILATION CYCLE AT OVERCURRENT CONDITION vs. POWER SUPPLY VOLTAGE
OUTPUT OSCILATION CYCLE AT OVERCURRENT CONDITION vs. AMBIENT TEMPERATURE 7.0
tS - Output Oscillation Cycle at Overcurrent Condition - ms
7.0
tS - Output Oscillation Cycle at Overcurrent Condition - ms
160
6.0 5.0 4.0 3.0 2.0 1.0 0 0
5
10
15
VCC - Power Supply Voltage - V
R07DS0595EJ0100 Rev.1.00 Jan 19, 2012
20
6.0 5.0 4.0 3.0 2.0 1.0 0 –50
0
50
100
150
200
Ta - Ambient Temperature - °C
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PD166015GR OUTPUT ON DUTY AT OVERCURRENT CONDITION vs. AMBIENT TEMPERATURE
16
16
14
14
DS - Output On Duty at Overcurrent Condition - %
DS - Output On Duty at Overcurrent Condition - %
OUTPUT ON DUTY AT OVERCURRENT CONDITION vs. POWER SUPPLY VOLTAGE
12 10 8 6 4 2 0 0
5
10
15
8 6 4 2 50
100
150
200
Ta - Ambient Temperature - °C
TURN ON DELAY TIME vs. AMBIENT TEMPERATURE
TURN OFF DELAY TIME vs. AMBIENT TEMPERATURE 160
tD(OFF) - Turn Off Delay Time - μs
18 16 14 12 10 8 6 4 2 0
50
100
150
140 120 100 80 60 40 20 0 –50
200
0
50
100
150
200
Ta - Ambient Temperature - °C
Ta - Ambient Temperature - °C
RISE TIME vs. AMBIENT TEMPERATURE
FALL TIME vs. AMBIENT TEMPERATURE
100
100
90
90
80
80
70 60 50 40 30
70 60 50 40 30
20
20
10
10
0 –50
0
VCC - Power Supply Voltage - V
tOFF - Fall Time - μs
tD(ON) - Turn On Delay Time - μs tON - Rise Time - μs
10
0 –50
20
20
0 –50
12
0
50
100
150
Ta - Ambient Temperature - °C
R07DS0595EJ0100 Rev.1.00 Jan 19, 2012
200
0 –50
0
50
100
150
200
Ta - Ambient Temperature - °C
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PD166015GR NEGATIVE OUTPUT VOLTAGE vs. AMBIENT TEMPERATURE
VO - Negative Output Voltage - V
0 –10 –20 –30 –40 –50 –60 –70 –80 –50
0
50
100
150
200
Ta - Ambient Temperature - °C
CURRENT DETECTION ACCURACY vs. AMBIENT TEMPERATURE
CURRENT DETECTION ACCURACY vs. AMBIENT TEMPERATURE 25
VOGAINW(0.10) - Current Detection Accuracy - %
VOGAINW(0.05) - Current Detection Accuracy - %
50 40 30 20 10 0 –10 –20 –30 –40 –50 –50
0
50
100
150
15 10 5 0 –5 –10 –15 –20 –25 –50
200
0
50
100
150
200
Ta - Ambient Temperature - °C
Ta - Ambient Temperature - °C
CURRENT DETECTION ACCURACY vs. AMBIENT TEMPERATURE
CURRENT DETECTION ACCURACY vs. AMBIENT TEMPERATURE
20
6
VOGAINW(0.5) - Current Detection Accuracy - %
VOGAINW(0.15) - Current Detection Accuracy - %
20
15 10 5 0 –5 –10 –15 –20 –50
0
50
100
150
Ta - Ambient Temperature - °C
R07DS0595EJ0100 Rev.1.00 Jan 19, 2012
200
4 2 0 –2 –4 –6 –50
0
50
100
150
200
Ta - Ambient Temperature - °C
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PD166015GR CURRENT DETECTION ACCURACY vs. AMBIENT TEMPERATURE
CURRENT DETECTION ACCURACY vs. AMBIENT TEMPERATURE 3 VOGAINW(1.5) - Current Detection Accuracy - %
VOGAINW(1.0) - Current Detection Accuracy - %
4 3 2 1 0 –1 –2 –3 –4 –50
0
50
100
150
2 1 0 –1 –2 –3 –50
200
Ta - Ambient Temperature - °C
0
50
100
150
200
Ta - Ambient Temperature - °C
Transient Thermal Resistance Characteristics TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Rth(t) - Transient Thermal Resistance - °C/W
1000
Rth(ch-a) = 125°C/W 100
Rth(ch-c) = 30°C/W 10
1 When mounted on a epoxy PCB (where FR-4 is 10 cm × 10 cm, dimension of copper foil is 15% and thickness of copper foil is 35 μm) 0.1 1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
R07DS0595EJ0100 Rev.1.00 Jan 19, 2012
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PD166015GR
8
5
1
4
6.0 ± 0.3 4.4
5.37 MAX.
0.8
0.15
+0.10 –0.05
1.44 0.05 MIN.
1.8 MAX.
Package Drawing
0.5 ± 0.2 0.10
1.27 0.78 MAX. 0.40
+0.10 –0.05
0.12 M
Taping Information There are two types (-E1, -E2) of taping depending on the direction of the device.
Reel side
Draw-out side
−E1 TYPE
−E2 TYPE
Marking Information This figure indicates the marking items and arrangement. However, details of the letterform, the size and the position aren't indicated.
6015
Part No.
Lead-free mark
Internal administrative code
Pin 1 indication
Lot number
R07DS0595EJ0100 Rev.1.00 Jan 19, 2012
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PD166015GR
Recommended Soldering Conditions The PD166015 should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact a Renesas Electronics sales representative. For technical information, see the following website. Semiconductor Package Mount Manual (http://www.renesas.com/prod/package/manual/) PD166015GR-E1-AY Note: Power SOP 8 PD166015GR-E2-AY Note: Power SOP 8 Process
Conditions
Infrared reflow
Maximum temperature (package’s surface temperature): 260°C or below, Time at maximum temperature: 10 seconds or less, Time at temperature higher than 220°C: 60 seconds or less, Preheating time at 160°C to 180°C: 60 to 120 seconds, Times: Three times, Flux: Rosin flux with low chlorine (0.2 Wt% or below) recommended.
Partial Heating Method
Pin temperature: 300°C or below, Heat time: 3 seconds or less (Per each side of the device), Flux: Rosin flux with low chlorine (0.2 Wt% or below) recommended.
Note:
Symbol IR60-00-3
—
Pb-free (This product does not contain Pb in the external electrode.)
R07DS0595EJ0100 Rev.1.00 Jan 19, 2012
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PD166015GR Data Sheet
Revision History
Rev. 1.00
Date Jan 19, 2012
Description Summary
Page —
First Edition Issued
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