Transcript
VN2460
N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package
BVDSS / BVDGS
RDS(ON) (max)
ID(ON) (min)
TO-92
TO-243AA*
Die**
600V
20Ω
0.25A
VN2460N3
VN2460N8
VN2460NW
* Same as SOT-89 Product Supplied on 2000 piece carrier tape reels. ** Die in wafer form.
Product marking for TO-243AA:
Features
VN4F❋
❏ Free from secondary breakdown ❏ Low power drive requirement
Where ❋ = 2-week alpha date code
❏ Ease of paralleling ❏ Low CISS and fast switching speeds
Advanced DMOS Technology
❏ Excellent thermal stability ❏ Integral Source-Drain diode
These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown.
❏ High input impedance and high gain
Applications ❏ Motor controls
Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
❏ Converters ❏ Amplifiers ❏ Switches ❏ Power supply circuits ❏ Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.)
Package Options
Absolute Maximum Ratings D
Drain-to-Source Voltage
BVDSS
Drain-to-Gate Voltage
BVDGS
Gate-to-Source Voltage
± 20V
Operating and Storage Temperature Soldering Temperature*
G D S
TO-243AA (SOT-89)
-55°C to +150°C
SGD
TO-92
300°C
* Distance of 1.6 mm from case for 10 seconds. Note: See Package Outline section for dimensions.
04/14/03 Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
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VN2460
Thermal Characteristics Package
ID (continuous)*
ID (pulsed)
Power Dissipation @ TC = 25°C
θjc
θja
°C/W
°C/W
IDR*
IDRM
TO-243AA
0.2A
0.6A
1.6W†
15
78 †
0.2A
0.6A
TO-92
0.16A
0.5A
1W
125
170
0.16A
0.5A
* ID (continuous) is limited by max rated Tj.
†
Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant PD increase possible on ceramic substrate.
Electrical Characteristics (@ 25°C unless otherwise specified) Symbol
Parameter
Min
BVDSS
Drain-to-Source Breakdown Voltage
600
VGS(th)
Gate Threshold Voltage
1.5
∆VGS(th)
Typ
Max
Unit
Conditions
V
VGS = 0V, ID = 2.0mA
4.0
V
VGS = VDS , ID = 2.0mA
Change in VGS(th) with Temperature
-5.5
mV/°C
VGS = VDS , ID = 2.0mA
IGSS
Gate Body Leakage
100
nA
VGS = ±20V, VDS = 0V
IDSS
Zero Gate Voltage Drain Current
10
µA
VGS = 0V, VDS = Max Rating
1
mA
VGS = 0V, VDS = 0.8 Max Rating TA = 125°C
ON-State Drain Current
0.25
A
RDS(ON)
Static Drain-to-Source ON-State Resistance
25
∆RDS(ON)
Change in RDS(ON) with Temperature
1.7
GFS
Forward Transconductance
CISS
Input Capacitance
COSS
Common Source Output Capacitance
50
CRSS
Reverse Transfer Capacitance
25
td(ON)
Turn-ON Delay Time
10
tr
Rise Time
10
td(OFF)
Turn-OFF Delay Time
25
tf
Fall Time
20
VSD
Diode Forward Voltage Drop
1.5
Ω
20
%/°C m
50
Ω
ID(ON)
VGS = 10V, VDS = 25V VGS = 4.5V, ID = 100mA VGS = 10V, ID = 100mA VGS = 10V, ID = 100mA VDS = 25V, ID = 100mA
150 pF
VGS = 0V, VDS = 25V f = 1.0 MHz
ns
VDD = 25V, ID = 250mA, RGEN = 25Ω
V
VGS = 0V, ISD = 400mA
Notes: 1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
VDD
RL
10V
90%
PULSE GENERATOR
INPUT 0V
10% t(ON)
td(ON)
Rgen
t(OFF) tr
td(OFF)
OUTPUT
tF D.U.T.
VDD
10%
INPUT
10%
OUTPUT 0V
90%
90%
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VN2460
Typical Performance Curves Output Characteristics
Saturation Characteristics
1.2
0.5 VGS = 10V VGS = 10V 8V
0.8
6V 0.6
0.4
6V 5V 0.3
0.2
5V
4V 0.1
0.2
0
8V
0.4
ID (Amperes)
ID (Amperes)
1.0
4V
0
10
20
30
40
3V 50
3V
0 0
2
4
VDS (Volts)
6
8
10
VDS (Volts)
Transconductance vs. Drain Current
Power Dissipation vs. Case Temperature 2.0
0.5 VDS = 25V
1.6 SOT-89
TA = -55°C
PD (Watts)
GFS (siemens)
0.4
0.3 TA = 25°C 0.2
1.2
0.8
TO-92
TA = 125°C
0.1
0.4
0.0 0.0
0.1
0.2
0.3
0.4
0
0.5
0
25
50
Maximum Rated Safe Operating Area
Thermal Resistance (normalized)
ID (amperes)
150
1.0
TO-92 (pulsed)
TO-92 (DC) SOT-89 (DC)
0.01
SOT-89 P D = 1.6W T C = 25°C
0.8
0.6
0.4
0.2
TO-92 P D = 1W
T C = 25°C
T C = 25°C
0
0.001 1
125
Thermal Response Characteristics
SOT-89 (pulsed)
0.1
100
TC (°C)
ID (Amperes)
1.0
75
10
100
1000
0.001
VDS (Volts)
0.01
0.1
tp (seconds)
3
1.0
10
VN2460
Typical Performance Curves On Resistance vs. Drain Current
BVDSS Variation with Temperature 50
1.2
1.1
RDS(ON) (ohms)
BVDSS (Normalized)
VGS = 4.5V 40
1.0
30 VGS = 10V 20
0.9 10
-50
0
50
100
0
150
0.2
0.6
0.8
1.0
Transfer Characteristics
VGS(TH) and RDS(ON) w/ Temperature
VDS = 25V
1.6
3.0
1.4
2.5
TA = -55°C
VGS(th) (normalized)
0.4
TA = 25°C
0.3 TA = 125°C
0.2
0.1
1.2
0 2
4
6
8
1.0
1.5
0.8
1.0
0.5
RDS(on) @ 10V, 0.1A
0.4 -50
10
2.0
VGS(th) @ 2mA
0.6
0
0.4
ID (Amperes)
0.5
ID (Amperes)
0
TJ (°C)
-25
0
25
50
RDS(ON) (normalized)
0.8
75
100
125
0.0 150
TJ (°C)
VGS (Volts)
Gate Drive Dynamic Characteristics
Capacitance vs. Drain Source Voltage 10
300
ID = 0.5A
f = 1MHz 8
VDS=10V
150
VGS (volts)
C (picofarads)
225
CISS
VDS=40V
6
4
75 2 COSS CRSS 0
0
0 10
20
30
0
40
1.0
2.0
3.0
4.0
5.0
QG (nanocoulombs)
VDS (volts)
04/14/03
©2003 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
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1235 Bordeaux Drive, Sunnyvale, CA 94089 TEL: (408) 222-8888 • FAX: (408) 222-4895 www.supertex.com
