Transcript
VP2206 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information
†
BVDSS / BVDGS
RDS(ON) (max)
ID(ON) (min)
-60V
0.9Ω
-4A
Order Number / Package TO-39
TO-92
VP2206N2
VP2206N3
MIL visual screening available
Advanced DMOS Technology
High Reliability Devices See pages 5-4 and 5-5 for MILITARY STANDARD Process Flows and Ordering Information.
These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown.
Features ❏ Free from secondary breakdown ❏ Low power drive requirement ❏ Ease of paralleling
Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
❏ Low CISS and fast switching speeds ❏ Excellent thermal stability ❏ Integral Source-Drain diode ❏ High input impedance and high gain ❏ Complementary N- and P-channel devices
Package Options
Applications ❏ Motor controls ❏ Converters ❏ Amplifiers ❏ Switches ❏ Power supply circuits ❏ Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) DGS
Absolute Maximum Ratings Drain-to-Source Voltage
BVDSS
Drain-to-Gate Voltage
BVDGS
Gate-to-Source Voltage
± 20V
Operating and Storage Temperature Soldering Temperature*
TO-39 Case: DRAIN
SGD
TO-92
-55°C to +150°C 300°C
Note: See Package Outline section for dimensions.
* Distance of 1.6 mm from case for 10 seconds.
11/12/01 Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
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VP2206
Thermal Characteristics
*
Package
ID (continuous)*
ID (pulsed)
TO-39
-0.75A
-8.0A
TO-92
-0.64A
-4.0A
Power Dissipation @ TC = 25°C
θjc °C/W
θja °C/W
IDR*
IDRM
6.0W
20.8
125
-0.75A
-8.0A
1.0W
125
170
-0.64A
-4.0A
ID (continuous) is limited by max rated Tj.
Electrical Characteristics (@ 25°C unless otherwise specified) Parameter
Min
Typ
BVDSS
Drain-to-Source Breakdown Voltage
-60
VGS(th)
Gate Threshold Voltage
-1.0
∆V GS(th)
Change in VGS(th) with Temperature
IGSS
Gate Body Leakage
IDSS
Zero Gate Voltage Drain Current
ID(ON)
ON-State Drain Current
Conditions VGS = 0V, ID = -10mA
-3.5
V
VGS = VDS, ID = -10mA
-4.3
-5.5
mV/°C
VGS = VDS, ID = -10mA
-1
-100
nA
VGS = ± 20V, VDS = 0V
-50
µA
VGS = 0V, VDS = Max Rating
-10
mA
VGS = 0V, VDS = 0.8 Max Rating TA = 125°C
-2
-4
-9
A
VGS = -5V, VDS = -25V VGS = -10V, VDS =- 25V
1.3
1.5
0.75
0.9
0.85
1.2
∆RDS(ON)
Change in RDS(ON) with Temperature
GFS
Forward Transconductance
CISS
Input Capacitance
325
450
COSS
Common Source Output Capacitance
125
180
CRSS
Reverse Transfer Capacitance
30
40
td(ON)
Turn-ON Delay Time
4
15
tr
Rise Time
16
25
td(OFF)
Turn-OFF Delay Time
16
50
tf
Fall Time
22
50
VSD
Diode Forward Voltage Drop
-1.1
-1.6
trr
Reverse Recovery Time
500
0.8
Unit V
-0.85
Static Drain-to-Source ON-State Resistance
RDS(ON)
Max
Ω %/°C
1.4
VGS = -5V, ID = -1A VGS = -10V, ID = -3.5A VGS = -10V, ID = -3.5A
Ω
Symbol
VDS = -25V, ID = -2A
pF
VGS = 0V, VDS = -25V f = 1 MHz
VDD = -25V ns
ID = -4A RGEN = 10Ω
V
VGS = 0V, ISD = -3.5A
ns
VGS = 0V, ISD = -1A
Note 1: All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) Note 2: All A.C. parameters sample tested.
Switching Waveforms and Test Circuit 0V
10%
PULSE GENERATOR
INPUT 90%
-10V
t(ON)
td(ON)
Rgen
t(OFF) td(OFF)
tr
tF
D.U.T.
0V
90%
OUTPUT
INPUT
90%
RL
OUTPUT VDD
10%
10% VDD
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VP2206
Typical Performance Curves Output Characteristics
Saturation Characteristics
-10
-10 VGS = -10V
VGS = -10V -8
-8V
ID (amperes)
ID (amperes)
-8
-6
-4
-6V
-8V
-6
-4
-6V
-2
-2
-4V
-4V -3V
-0 0
-10
-20
-30
-3V
-0
-40
0
-50
-2
-4
-6
-8
-10
VDS (volts)
VDS (volts)
Transconductance vs. Drain Current
Power Dissipation vs. Case Temperature
2
10
VDS = -25V
TA= -55°C
TA = 125°C
TA = 25°C
PD (watts)
GFS (siemens)
8
1
TO-39
6
4
2 TO-92 0
0 0
-5
0
-10
25
50
ID (amperes)
-10
125
150
1.0
TO-39 (pulsed)
Thermal Resistance (normalized)
TO-92 (pulsed) TO-39 (DC)
ID (amperes)
100
Thermal Response Characteristics
Maximum Rated Safe Operating Area
-1.0
TO-92 (DC)
-0.1
75
TC (°C)
0.8
TO-39 P D = 6.0W
0.6
T C = 25°C 0.4
TO-92 P D = 1.0W T C = 25°C
0.2
T C = 25°C
-0.01 -1
-10
-100
0 0.001
-1000
VDS (volts)
0.01
0.1
tp (seconds)
3
1
10
VP2206
Typical Performance Curves BVDSS Variation with Temperature
On-Resistance vs. Drain Current 5
1.1
VGS = -5V
RDS(ON) (ohms)
BVDSS (normalized)
4
1.0
3
2
VGS = -10V 1 0.9 0 0
50
100
150
0
-2
-4
-8
-10
V(th) and RDS Variation with Temperature
Transfer Characteristics
2.0
1.2
-10
VDS = -25V
RDS(ON) @ -10V, -3.5A
-8
TA = -55°C
VGS(th) (normalized)
ID (amperes)
-6
ID (amperes)
Tj (°C)
25°C
-6
-4
125°C
1.1
1.6
1.0
1.2
0.9
0.8
V(th)@ -1mA 0.4
0.8
-2
0
0.7
0 0
-2
-4
-6
-8
-10
RDS(ON) (normalized)
-50
-50
0
50
VGS (volts)
100
150
Tj (°C)
Capacitance vs. Drain-to-Source Voltage
Gate Drive Dynamic Characteristics -10
400
f = 1MHz
CISS
VDS = -10V
-8
VGS (volts)
C (picofarads)
300
200
VDS = -40V
-6
725 pF -4
COSS 100 -2
CRSS
310 pF
0
0 0
-10
-20
-30
-40
0
2
4
6
8
10
QG (nanocoulombs)
VDS (volts)
11/12/01
©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
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