Transcript
VP2450 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package
BVDSS / BVDGS
RDS(ON) (max)
ID(ON) (min)
TO-92
TO-243AA*
Die
-500V
30Ω
-0.2A
VP2450N3
VP2450N8
VP2450ND
* Same as SOT-89. Product supplied on 2000 piece carrier tape reels.
Features
Product marking for TO-243AA:
❏ Free from secondary breakdown
VP4E❋
❏ Low power drive requirement
Where ❋ = 2-week alpha date code
❏ Ease of paralleling ❏ Low CISS and fast switching speeds ❏ Excellent thermal stability
Advanced DMOS Technology
❏ Integral Source-Drain diode
These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown.
❏ High input impedance and high gain ❏ Complementary N- and P-channel devices
Applications ❏ Motor controls
Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
❏ Converters ❏ Amplifiers ❏ Switches ❏ Power supply circuits
Package Options
❏ Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.)
Absolute Maximum Ratings
D G
Drain-to-Source Voltage
BVDSS
Drain-to-Gate Voltage
BVDGS
Gate-to-Source Voltage
± 20V
Operating and Storage Temperature Soldering Temperature*
D S SGD
TO-92
TO-243AA (SOT-89)
-55°C to +150°C 300°C Note: See Package Outline section for dimensions.
* Distance of 1.6 mm from case for 10 seconds.
07/08/02 Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
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VP2450
Thermal Characteristics Package
ID (continuous)*
TO-92
-0.1A
TO-243AA * †
ID (pulsed)
Power Dissipation @ TC = 25°C
θjc
θja
°C/W
°C/W
1W
125 15
-0.3A
-0.16A
-0.80A
1.6W
†
IDR*
IDRM
170
-0.1A
-0.3A
78
-0.16A
-0.80A
ID (continuous) is limited by max rated Tj. Mounted on FR5 Board. 25mm x 25mm x 1.57mm. Significant PD increase possible on ceramic substrate.
Electrical Characteristics (@ 25°C unless otherwise specified) Symbol
Parameter
Min
BVDSS
Drain-to-Source Breakdown Voltage
-500
VGS(th)
Gate Threshold Voltage
-1.5
∆V GS(th)
Typ
Max
Unit
Conditions
V
VGS = 0V, ID = -250µA
-3.5
V
VGS = VDS, ID = -1mA
Change in VGS(th) with Temperature
-4.8
mV/°C
VGS = VDS, ID = -1mA
IGSS
Gate Body Leakage
-100
nA
VGS = ±20V, VDS = 0V
IDSS
Zero Gate Voltage Drain Current
-10
µA
VGS = 0V, VDS = Max Rating
-1
mA
VGS = 0V, VDS = 0.8 Max Rating TA = 125°C
mA
VGS = -4.5V, VDS = -15V
ID(ON)
ON-State Drain Current
-75 -200
VGS = -10V, VDS = -15V
Static Drain-to-Source ON-State Resistance
35
Ω
30
∆RDS(ON)
Change in RDS(ON) with Temperature
0.75
GFS
Forward Transconductance
CISS
Input Capacitance
COSS
Common Source Output Capacitance
75
CRSS
Reverse Transfer Capacitance
20
td(ON)
Turn-ON Delay Time
10
tr
Rise Time
25
td(OFF)
Turn-OFF Delay Time
45
tf
Fall Time
25
VSD
Diode Forward Voltage Drop
trr
Reverse Recovery Time
150
320
VGS = -4.5V, ID = -50mA VGS = -10V, ID = -100mA
%/°C m
Ω
RDS(ON)
VGS = -10V, ID = -100mA VDS = -15V, ID = -100mA
190 pF
VGS = 0V, VDS =- 25V f = 1 MHz
ns
VDD = -25V ID = -200mA RGEN = 25Ω
V
VGS = 0V, ISD = -100mA
ns
VGS = 0V, ISD = -100mA
-1.8 300
Notes: 1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit 0V
10%
PULSE GENERATOR
INPUT 90%
-10V
t(ON)
td(ON)
Rgen
t(OFF) td(OFF)
tr
tF
D.U.T.
0V
90%
OUTPUT
INPUT
90%
RL
OUTPUT VDD
10%
10% VDD
2
VP2450
Typical Performance Curves Output Characteristics -1.0
Saturation Characteristics -0.6
VGS=-10V
VGS = -6.0V
VGS=-4.5V
-0.5
VGS=-6.0V
-0.6
ID (Amperes)
ID (Amperes)
-0.8
VGS = -10V
VGS=-3.5V
-0.4
VGS = -4.5V -0.3 VGS = -3.5V
-0.4 -0.2
-0.2 -0.1
0.0
0.0 0
-10
-20
-30
-40
-50
0
-2
-4
-6
-8
-10
VDS (Volts)
VDS (Volts)
Transconductance vs. Drain Current
Power Dissipation vs. Ambient Temperature
1.0
2.0 V
DS
=-20V TO-243AA
T
0.6
A
T
T
A
1.5
=-55¡C
A
PD (Watts)
GFS (Siemens)
0.8
=25¡C
=125¡C
1.0 TO-92
0.4
0.5 0.2
0.0
0.0 0
-100
-200
-300
-400
-500
0
25
50
ID (Milliamperes)
Maximum Rated Safe Operating Area
100
125
150
Thermal Response Characteristics 1.0
-1.0
Thermal Resistance (normalized)
TO-243AA (pulsed)
TO-92 (pulsed)
TO-243AA (DC)
ID (amperes)
75
TA (¡C)
-0.1
TO-92 (DC)
-0.01
0.8
TO-243AA
°
TA = 2 5 C
0.6
PD = 1 . 6 W
0.4
0.2
TO-92 PD = 1W
T
A
°
TC = 25 C
=25¡C
-0.001
0 -1
-10
-100
-1000
0.001
VDS (Volts)
0.01
0.1
tp (seconds)
3
1
10
VP2450
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07/08/02
©2002 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
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1235 Bordeaux Drive, Sunnyvale, CA 94089 TEL: (408) 744-0100 • FAX: (408) 222-4895 www.supertex.com
