Transcript
VS-12F(R) Series www.vishay.com
Vishay Semiconductors
Standard Recovery Diodes (Stud Version), 12 A FEATURES • High surge current capability • Stud cathode and stud anode version • Wide current range • Types up to 1200 V VRRM • Designed and qualified for industrial and consumer level • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
DO-203AA (DO-4)
TYPICAL APPLICATIONS
PRODUCT SUMMARY IF(AV)
12 A
Package
DO-203AA (DO-4)
Circuit configuration
Single diode
• Battery charges • Converters • Power supplies • Machine tool controls
MAJOR RATINGS AND CHARACTERISTICS PARAMETER
TEST CONDITIONS
IF(AV)
VALUES
UNITS
12
A
144
°C
19
A
TC
IF(RMS) IFSM I2t VRRM
50 Hz
265
60 Hz
280
50 Hz
351
60 Hz
320
Range
100 to 1200
V
-65 to 175
°C
TJ
A
A2s
ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER
VOLTAGE CODE
VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V
VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V
VR(BR), MINIMUM AVALANCHE VOLTAGE V (1)
10
100
150
-
20
200
275
-
40
400
500
500
60
600
725
750
80
800
950
950
100
1000
1200
1150
120
1200
1400
1350
VS-12F(R)
IRRM MAXIMUM AT TJ = 175 °C mA
12
Note (1) Avalanche version only available from V RRM 400 V to 1200 V
Revision: 28-Jan-14
Document Number: 93487 1 For technical questions within your region:
[email protected],
[email protected],
[email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-12F(R) Series www.vishay.com
Vishay Semiconductors
FORWARD CONDUCTION PARAMETER
SYMBOL
Maximum average forward current at case temperature Maximum RMS forward current Maximum on-repetitive peak reverse power
IF(AV)
TEST CONDITIONS 180° conduction, half sine wave
IF(RMS) PR(1)
10 μs square pulse, TJ = TJ maximum t = 10 ms
Maximum peak, one-cycle forward, non-repetitive surge current
IFSM
t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms
Maximum I2t for fusing
I2t
Maximum I2t for fusing
I2t
t = 8.3 ms t = 10 ms t = 8.3 ms
VALUES
UNITS
12
A
144
°C
19
A
7
K/W
No voltage reapplied
265
100 % VRRM reapplied
225
280 Sinusoidal half wave, initial TJ = TJ maximum
No voltage reapplied
235 351 320
100 % VRRM reapplied
A
250
A2s
226
t = 0.1 to 10 ms, no voltage reapplied
3510
Low level value of threshold voltage
VF(TO)1
(16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum
0.77
High level value of threshold voltage
VF(TO)2
(I > x IF(AV)), TJ = TJ maximum
0.97
A2s V
Low level value of forward slope resistance
rf1
(16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum
10.70
High level value of forward slope resistance
rf2
(I > x IF(AV)), TJ = TJ maximum
6.20
Ipk = 38 A, TJ = 25 °C, tp = 400 μs rectangular wave
1.26
V
VALUES
UNITS
m
Maximum forward voltage drop
VFM
Note (1) Available only for avalanche version, all other parameters the same as 12F
THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER
SYMBOL
Maximum junction operating temperature range Maximum storage temperature range
TEST CONDITIONS
TJ
-65 to 175
TStg
-65 to 200
Maximum thermal resistance, junction to case
RthJC
DC operation
Maximum thermal resistance, case to heatsink
RthCS
Mounting surface, smooth, flat and greased
2
Not lubricated threads Allowable mounting torque Lubricated threads Approximate weight Case style
See dimensions - link at the end of datasheet
0.5
°C K/W
1.5 + 0 - 10 %
N·m
13
lbf · in
1.2 + 0 - 10 %
N·m
10
lbf · in
7
g
0.25
oz.
DO-203AA (DO-4)
RthJC CONDUCTION CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
180°
0.33
0.26
120°
0.41
0.44
90°
0.53
0.58
60°
0.78
0.81
30°
1.28
1.29
TEST CONDITIONS
UNITS
TJ = TJ maximum
K/W
Note • The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Revision: 28-Jan-14
Document Number: 93487 2 For technical questions within your region:
[email protected],
[email protected],
[email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-12F(R) Series www.vishay.com
180
12F(R) Series R thJC (DC) = 2.0 K/W
12F(R) Series R thJC (DC) = 2.0 K/W
170 Conduction Angle 160
150 30°
60°
90°
120°
2
4
6
8
10
160
12
Conduction Period
150 30° 60° 90°
140
120° 180°
180°
140 0
170
Maximum Allowable Case Temperature (°C)
Maximum Allowable Case Temperature (°C)
180
Vishay Semiconductors
DC
130 0
14
4
8
12
16
Average Forward Current (A)
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Maximum Average Forward Power Loss (W)
14 180° 120° 90° 60° 30°
12 10
10 K/W 12 K/W
th
SA
=8
6K /W K/W
15 K /W
-D
elta R
20 K /W
RMS Limit
8
R
20
6
30 K /W
Conduction Angle 4 12F(R) Series TJ = 175°C
2 0 0
2
4
6
8
10
12
Average Forward Current (A)
14
25
50
75
100
Maximum Allowable Ambient Temperature (°C)
Fig. 3 - Forward Power Loss Characteristics
Maximum Average Forward Power Loss (W)
20 Rt
DC 180° 120° 90° 60° 30°
16
12
A
=6 K/W
-D
elta R
12 K /W 15 K /W 20 K/W
RMS Limit
8
hS
8 K/ W 10 K /W
Conduction Period 4
30 K/W
12F(R) Series TJ = 175°C
0 0
4
8
12
16
Average Forward Current (A)
20
25
50
75
100
Maximum Allowable Ambient Temperature (°C)
Fig. 4 - Forward Power Loss Characteristics
Revision: 28-Jan-14
Document Number: 93487 3 For technical questions within your region:
[email protected],
[email protected],
[email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-12F(R) Series
Instantaneous Forward Current (A)
250
Vishay Semiconductors
At Any Rated Load Condition And With Rated V RRM Applied Following Surge. Initial TJ = 175°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s
225 200 175 150 125
12F(R) Series
100 1
10
1000 TJ = 25°C TJ = 175°C 100
10
12F(R) Series 1 0
100
1
2
3
4
5
6
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Instantaneous Forward Voltage (V)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 7 - Forward Voltage Drop Characteristics
275
ZthJC - Transient Thermal Impedance (°C/W)
Peak Half Sine Wave Forward Current (A)
Peak Half Sine Wave Forward Current (A)
www.vishay.com
Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Initial TJ = 175°C No Voltage Reapplied Rated VRRM Reapplied
250 225 200 175 150 125
12F(R) Series
100 0.01
0.1
1
Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current
10 Steady State Value R thJC = 2.0 K/W (DC Operation)
1
12F(R) Series 0.1 0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristics
ORDERING INFORMATION TABLE Device code
VS-
12
F
R
120
M
1
2
3
4
5
6
1
-
Vishay Semiconductors product
2
-
Current rating: Code = IF(AV)
3
-
F = Standard device
4
-
None = Stud normal polarity (cathode to stud) R = Stud reverse polarity (anode to stud)
5
-
Voltage code x 10 = VRRM (see Voltage Ratings table)
6
-
None = Stud base DO-203AA (DO-4) 10-32UNF-2A M = Stud base DO-203AA (DO-4) M5 x 0.8 (not available for avalanche diodes) LINKS TO RELATED DOCUMENTS
Dimensions Revision: 28-Jan-14
www.vishay.com/doc?95311
Document Number: 93487 4 For technical questions within your region:
[email protected],
[email protected],
[email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions Vishay Semiconductors
DO-203AA (DO-4) DIMENSIONS in millimeters (inches)
+ 0.3 0 + 0.01 (0.08 0)
0.8 ± 0.1 (0.03 ± 0.004)
3.30 (0.13) 4.00 (0.16)
2
5.50 (0.22) MIN.
R 0.40 R (0.02)
Ø 1.80 ± 0.20 (Ø 0.07 ± 0.01) 20.30 (0.80) MAX.
Ø 6.8 (0.27)
10.20 (0.40) MAX. 3.50 (0.14)
11.50 (0.45) 10.70 (0.42)
10/32" UNF-2A For metric devices: M5 x 0.8
11 (0.43)
Document Number: 95311 Revision: 30-Jun-08
For technical questions, contact:
[email protected]
www.vishay.com 1
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Vishay
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Revision: 02-Oct-12
1
Document Number: 91000