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X-band Parallel Input 5-bit Attenuator / 6-bit Phase Shifter

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X-Band Parallel Input 5-Bit Attenuator / 6-Bit Phase Shifter / Buffer Amplifier Die - High Dynamic Range ITT373503D Features • • • ADVANCED INFORMATION Phase Shifter /Attenuator 8 to 11 GHz Operation 50 Ω Input Impedance ® Self-Aligned MSAG MESFET Process RF Out RF In Parallel Inputs Description Maximum Ratings (T The ITT373503D is a high dynamic range X-Band Parallel Input 5-Bit Attenuator / 6-Bit Phase Shifter / Buffer Amplifier fabricated using ITT GaAsTEK’s ® mature GaAs Self-Aligned MSAG MESFET Process. This product is fully matched to 50 ohms on both the input and the output. Rating DC Drain Supply Voltage DC Gate Supply Voltage Digital Supply Voltage RF Input Power Junction Temperature Storage Temperature ELECTRICAL CHARACTERISTICS VD=5.0 V, VG = -4.0 V, VEE = -4.0 V, Characteristic Frequency Range Maximum Gain Input and Output Return Loss Gain Flatness (Peak-to-Peak over any 250 MHz band) Attenuation Range (5-Bits, 32 Steps 0.75 dB Nominal) RMS Attenuation Error (uncorrected) Phase Shift Range (6-Bits, 64 Steps 5.6 degrees Nominal) RMS Phase Error (uncorrected) Gain Variation (Over all Phase Shifter Settings) Input Third Order Intercept Point Output Third Order Intercept Point 1-dB Compression Point Noise Figure Non-Harmonic Spurious Output A = 25 °C unless otherwise noted) Symbol VD VG VEE PIN TJ TSTG Value 8 -6 -6 200 150 -40 to +150 T=25 °C, Input and Output Connected to 50 Ω. Symbol — RL — — — — — — TOI TOI P1dB Min 8.0 16 11 — — — — — — 7.5 25.5 21.5 Typ — 18 13 0.5 — 0.25 — 2 +/- 1 8.5 26.5 22.5 10 Max 11.0 20 — 1 23.3 0.45 353.4 3 +/- 1.5 — — -60 Specifications Subject to Change Without Notice Unit V V V mW °C °C Unit GHz dB dB dB dB dB Deg Deg dB dBm dBm dBm dB dBc 902332 D, October 1999 GaAsTEK 5310 Valley Park Drive Roanoke, VA 24019 USA www.gaastek.com Tel: 1-540-563-3949 1-888-563-3949 (USA) Fax: 1-540-563-8616 1 X-Band Parallel Input 5-Bit Attenuator / 6-Bit Phase Shifter / Buffer Amplifier Die - High Dynamic Range ITT373503D ADVANCED INFORMATION Characteristic DC Power Supplies Microwave Drain Supply Voltage Gate Supply Voltage Drain Supply Current Gate Supply Current Digital Source Supply Voltage Source Supply Current Logic Levels at Input Input High Voltage Input Low Voltage Input High Input Current Input Low Input Current Timing Delay between enable signal and bit change Reliability (80 °C Baseplate) Symbol Min Typ Max Unit VD VG ID IG — — 295 1.0 5 -4 340 1.5 — — 385 2.0 V V mA mA VEE IEE — 4 -4 10 — 16 V mA Vih Vil Iih Iil 3.0 — — — — 0.4 0.5 0.1 50 V V mA mA ns Hours 25 MTTF Specifications Subject to Change Without Notice 6 10 902332 D, October 1999 GaAsTEK 5310 Valley Park Drive Roanoke, VA 24019 USA www.gaastek.com Tel: 1-540-563-3949 1-888-563-3949 (USA) Fax: 1-540-563-8616 2 X-Band Parallel Input 5-Bit Attenuator / 6-Bit Phase Shifter / Buffer Amplifier Die - High Dynamic Range ITT373503D ADVANCED INFORMATION MECHANICAL INFORMATION 557 812.5 362 RF IN GND o 5.6 762 o 11 VG o 22 200 SPACING FOR ALL PADS o 45 3238 o 90 VEE GND o 180 0.75 dB 1.5 dB 3212.5 3 dB VD 3638 6 dB GND 12 dB 4000 557 RF OUT 6000 Notes: Dimensions in microns Pad dimensions Bias Pad (Vd, Vg) Control Pads Ground-RF-Ground Spacing Specifications Subject to Change Without Notice 150umX150um 125umX125um 225um 902332 D, October 1999 GaAsTEK 5310 Valley Park Drive Roanoke, VA 24019 USA www.gaastek.com Tel: 1-540-563-3949 1-888-563-3949 (USA) Fax: 1-540-563-8616 3