Transcript
YG808C10R
(100V / 30A TO-22OF15) Outline Drawings
SCHOTTKY BARRIER DIODE
10±0.5
ø3.2
4.5±0.2
+0.2 -0.1
2.7±0.2
1.2±0.2 13Min
3.7±0.2
Features
15±0.3
6.3
2.7±0.2
+0.2
Low VF Super high speed switching. High reliability by planer design.
0.7±0.2
0.6 -0
2.54±0.2
2.7±0.2
JEDEC EIAJ
Applications
SC-67
Connection Diagram
High speed power switching.
2
Maximum Ratings and Characteristics
1
3
Absolute Maximum Ratings Item
Symbol
Repetitive peak reverse voltage
VRRM
Repetitive peak surge reverse voltage
VRSM
Isolating voltage
Viso
Average output current
IO
Suege current
IFSM
Operating junction temperature
Tj
Storage temperature
Tstg
Conditions
tw=500ns, duty=1/40 Terminals to Case, AC. 1min. duty=1/2, Tc=80°C Square wave Sine wave 10ms
Symbol
Unit
100
V
100
V
1500
V
30*
Conditions
Forward voltage drop **
VF
IF=10A
Reverse current **
IR
VR=VRRM
Thermal resistance
Rth(j-c)
Junction to case
A
180
A
+150
°C
-40 to +150
Electrical Characteristics (Ta=25°C Unless otherwise specified ) Item
Rating
°C
* Out put current of centertap full wave connection. Max.
Unit
0.80
V
20.0
mA
2.0
°C/W
** Rating per element Mechanical Characteristics Mounting torque Weight
Recommended torque
0.3 to 0.5 2.3
N·m g
A-492
(100V / 30A TO-22OF15)
YG808C10R
Characteristics Forward Characteristic
100
(typ.)
3
Reverse Characteristic (typ.)
10
o
Tj=125 C o
Tj=100 C
o
Reverse Current
Tj=125 C o
Tj=100 C o
Tj=25 C
1
1
10
0
10
o
Tj=25 C -1
10
IR 0.1 0.0
-2
0.2
0.4
0.6
VF
1.2
1.4
Forward Voltage
1.6
1.8
360°
18 o
Square wave λ=60 o Square wave λ=120 o Sine wave λ=180 o Square wave λ=180 DC
14 12 10 8 6
2
PR
4 Per 1element
0 0
2
Io
20
30
40
50
60
70
Reverse Voltage
80
90
4
6
8
10
12
Average Forward Current
14
100 110
(V)
Reverse Power Dissipation
45 360°
40
λ
16
10
VR
Io
20
0
(V)
50
24
160
10
2.0
(W)
Forward Power Dissipation
22
1.0
Reverse Power Dissipation
(W)
26
0.8
Forward Power Dissipation
28
WF
o
2
10
(mA)
o
Tj=150 C
10
IF
Forward Current
(A)
Tj=150 C
DC VR
35 α
30 25 20 α=180
15
o
10 5 0
16
0
(A)
10
20
30
VR
40
50
60
70
Reverse Voltage
80
90
100 110
(V)
Junction Capacitance Characteristic (typ.)
Current Derating (Io-Tc)
150
120 110
Case Temperature
100
DC
90 o
Sine wave λ=180 o Square wave λ=180
80 70 60
Square wave λ=120 360° λ Io
40 30 20
Tc
o
50
Square wave λ=60
VR=50V
1000
100
Cj
o
( C)
130
Junction Capacitance (pF)
140
o
10 10
0 0
5
Io
10
15
20
25
30
35
Average Output Current
(A)
40
λ:Conduction angle of forward current for each rectifier element
Io:Output current of center-tap full wave connection
45
1
10
VR
100
Reverse Voltage
1000
(V)
YG808C10R
(100V / 30A TO-22OF15)
Surge Capability
100
I FSM
Peak Half - Wave Current
(A)
1000
10 1
10
100
Number of Cycles at 50Hz
1
Transient Thermal Impedance
Transient Thermal Impedance
o
( C/W)
10
0
10
10
-1
10
-2
10
-3
-2
-1
10
0
10
t
10
Time
(sec.)
1
10
10
2
